Samsung's pure-play foundry division. Second-largest foundry globally, investing heavily in Gate-All-Around (GAA) transistor technology.
| Name | Location | Status | Node(s) | Capacity | CapEx |
|---|---|---|---|---|---|
| Taylor Fab (Texas) | Taylor, United States | Under Construction | — | — | $17.0B |
| Pyeongtaek P3Est. open 2023 | Pyeongtaek, South Korea | Operational | SF4, SF3E | 110K wspm | $15.7B |
wspm = wafer starts per month [est.]
Samsung 2nm-class GAA nanosheet. Competing with TSMC N2.
Mass production: 2026 [est.]
Samsung 3nm-class GAA (first in industry at 3nm).
Mass production: 2024 [est.]
Samsung 4nm-class FinFET. Qualcomm Snapdragon 8 Gen 2/3 lead customer.
Mass production: 2022 [est.]
* All capacity figures, CapEx estimates, and status data are demo approximations only. Sourced from publicly available estimates. Not for investment use.